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Dr Ian Harrison graduated from the University of Nottingham in 1982 with a First Class Honours Degree in Physics. He then studied for his PhD at the University of Manchester. Before returning to Nottingham to take up his present post as Lecturer, he was a research assistant at Manchester. In 1995 he became leader of the Nitrides research strand within the School. In 1999, he was promoted to Senior Lecturer. His initial research interests at Nottingham were concerned with the diffusion of dopants in III-V semiconductors and have contributed to the INSPEC semiconductors review series. Subsequently he has also taken a keen interest in the application of GaN and related compounds to optoelectronic and electronic devices. He received a Royal Academy of Engineering Foresight Award which enabled him to spend a sabbatical year (2001-2002) at the University of California, Santa Barbara, designing high speed InP HBT integrated circuits. His current research interests are using custom CMOS IC's to build high speed single photon detection circuits and the development of CMOS THz detectors. He also has an interest in the development of ferroelectric materials and the development of novel materials for RF applications. Dr Harrison has published over 150 papers.
Dr Ian Harrison is (or has formerly been) affiliated with Nottingham-rf-devices-circuits-and-materials-university-of-nottingham, Photonic and Radio Frequency Engineering Group, University of Nottingham and University of Nottingham.