t: +7 812 292 7989
Alexander V. Andrianov received the M.Sc. degree in optoelectronics with honours from Leningrad Electrotechnical Institute, Russia, in 1979, the Ph.D. degree in the physics of semiconductors from Ioffe Physical Technical Institute, Russia, in 1983 and the Dr. Sc. degree in Semiconductor Physics from the same institute in 2007. He is currently a Leading Research Fellow with Ioffe Physical Technical Institute, St Petersburg, where his research interests include terahertz electromagnetic waves physics of low-dimensional systems, nonequilibrium phenomena in semiconductors and semiconductor devices, and wide bandgap materials. He received the USSR Government Prize for Young Researchers (Lenin Komsomol Prise) in the Field of Physics in 1989 for discovering the new phenomena - Circular photocurrents in semiconductors. He was a Research Associate with the University of Nottingham from 1996 to 1998 and again in 2002. During this time, his research activities included the establishment of a multifunctional optical laboratory for the characterisation semiconductor devices, photo- and electroluminescence studies of high-power laser diodes and investigations of the optical properties of the GaAs:N and GaN:As material systems. His contributions to research at Nottingham were recognised by the award of a Special Professorship from the Department of Electrical and Electronic Engineering, University of Nottingham, in 2006.
Dr Alexander Andrianov is (or has formerly been) affiliated with Photonic and Radio Frequency Engineering Group, University of Nottingham and University of Nottingham.
Areas of Expertise
- Non-equilibrium processes in semiconductors
- Non-linear optical phenomena in solid states
- Optical spectroscopy of condensed matter
- Physics of low-dimensional systems
- Terahertz Electromagnetic Radiation
- Wide band gap materials