Huiyun Liu received the Ph.D. in Semiconductor Science from the Institute of Semiconductor, Chinese Academy of Sciences. After receiving his PhD, he joined the EPSRC National Centre for III-V Technologies at University of Sheffield in August 2001. He was responsible for the development of Molecular Beam Epitaxy growth of semiconductor materials for the UK academic and industrial research community. In 2007, he was awarded Royal Society University Research Fellow and started his academic career in the Department of Electronic and Electrical Engineering at UCL as a Senior Lecturer. He has co-authored over 100 peer-reviewed journal papers in the area of semiconductor materials and devices. His general interest concentrates on the nanometre-scale engineering of low-dimensional semiconductor structures (such as quantum dots, quantum wires, and quantum wells) by using molecular beam epitaxy and the development of novel optoelectronic devices including lasers, detectors, and modulators by developing novel device process techniques.
Areas of Expertise
- Growth and Fabrication of III-V materials and devices, in particular quantum-dot materials and devices
- Molecular Beam Epitaxy
- Semiconductor III-V device process
- Semiconductor physics in opto-electronic materials and devices
- Silicon Photonics