RF Devices, Circuits and Materials, University of Nottingham

w: http://www.eee.nott.ac.uk/prfeg/research/rf.php

The current activities of the RF Devices, Circuits and Materials research strand include: the design of RF circuits using SiGe HBTs; the study of extremely high frequency devices; the investigation into the interaction of optical and high frequency signals using femtosecond lasers and four wave mixing; the development and characterisation of GaN and related materials for extremely high speed devices and circuits; the dielectric characterisation of novel ceramic materials.

RF Devices, Circuits and Materials, University of Nottingham is part of Photonic and Radio Frequency Engineering Group, University of Nottingham.

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