Molecular Beam Epitaxy Facility Research (Institute of Microwaves and Photonics, University of Leeds)

w: http://www.engineering.leeds.ac.uk/imp/mbef.shtml

Molecular beam epitaxy (MBE) is a flexible technique for the growth of layered compound semiconductor structures of extremely high purity and with atomic-scale resolution of composition and doping in the growth direction. The optical and electronic properties of the constituent semiconductors are combined to provide new structures tailored to the specific application. This technique has been central to a number of electronic, optoelectronic, and nanotechnology developments over the last twenty years, including the growth and development of mid- and far-infrared (terahertz) quantum cascade lasers together with the fabrication of advanced materials such as low-temperature GaAs and related compounds, used for optical mixers and electro-optic switches. Our new '1M Oxford Instruments V80H III-V MBE machine and facility gives us a competitive advantage over the next ten years in the fields of condensed matter physics, terahertz electronics and photonics, optoelectronics, semiconductor materials, semiconductor device engineering, photonics, and nanotechnology.

Hosted by: Institute of Microwaves and Photonics, University of Leeds.

Contact: e.h.linfield@leeds.ac.uk.

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